作者: 超级管理员 时间:2022-10-05 16:24:39 阅读:827
热等静压氮化硅和气压/冷等静压烧结氮化硅性能比较
HIP Silicon Nitride VS GPS Silicon Nitride
基本数据Basic Data | 气压烧结GPS | 热等静压HIP | |||
密度Density | g/cm3 | 3.22~3.26 | 3.24~3.26 | ||
吸水率Water Absorption | % | 0 | 0 | ||
力学性能 Mechanical Characteristics | 维氏硬度Vickers Hardness (Load 5KG) | Gpa | 14.5 | 15 | |
抗弯强度Flexural Strength | Mpa | 700 | 1000 | ||
抗压强度Compressive Strength | Mpa | 3200 | 3900 | ||
杨氏模量Young’s Modulus of Elasticity | Gpa | 310 | 310 | ||
泊松比Poisson’s Ratio | - | 0.28 | 0.28 | ||
断裂韧性Fracture Toughness | Mpa·m1/2 | 6-7 | 7 | ||
热学性能 Thermal Characteristics | 热膨胀系数 Coefficient of Thermal Expansion | 40-400 | *10-6/°C | 3.2~3.4 | 3.5 |
热导率Thermal Conductivity | 20 °C | W(m·K) | 18~22 | 23 | |
电学性能 Electrical Characteristics | Volume Resistivity | 20 °C | Ω·cm | ≥1014 | ≥1014 |
Dielectric Constant (1MHz) | - | - | - |
热等静压HIP=Hot Isostatic Pressed
气压烧结+冷等静压GPS=Gas Press Sintered(Cold Isostatic)
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